Datasheet 2SK4103(TE16L1,NQ) - Toshiba MOSFET, N CH, 5 A, 500 V, DPAK

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 5 A, 500 V, DPAK

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Docket:
2SK4103
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)
2SK4103
Switching Regulator Applications
· · · · Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 2.8S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: 5 A
• Drain Source Voltage Vds: 500 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 1.5 Ohm
• Package / Case: PW-MOLD
• Power Dissipation: 40 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 500 V
• Voltage Vgs Max: 30 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

2SK4103(TE16L1NQ), 2SK4103(TE16L1 NQ)