Datasheet SI2305CDS-T1-GE3 - Vishay MOSFET, P-CH, 8 V, 5.8 A, SOT23

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P-CH, 8 V, 5.8 A, SOT23

Download Data Sheet

Docket:
Si2305CDS
Vishay Siliconix
P-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) -8 RDS(on) () 0.035 at VGS = - 4.5 V 0.048 at VGS = - 2.5 V 0.065 at VGS = - 1.8 V ID (A)d - 5.8 - 5.0 - 4.3 12 nC Qg (Typ.)

Specifications:

• Current Id Max: -5.8 A
• Drain Source Voltage Vds: -8 V
• Number of Pins: 3
• On State Resistance: 28 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 960 mW
• Rds(on) Test Voltage Vgs: -4.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vgs Max: 8 V

RoHS: Yes

Other Names:

SI2305CDST1GE3, SI2305CDS T1 GE3