Datasheet SI4425DDY-T1-GE3 - Vishay MOSFET, P-CH, 30 V, 19.7 A, SO8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P-CH, 30 V, 19.7 A, SO8

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Docket:
Si4425DDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.0098 at VGS = 10 V 0.0165 at VGS = 4.5 V ID (A)a - 19.7 27 nC - 15.2 Qg (Typ.)

Specifications:

• Current Id Max: -19.7 A
• Drain Source Voltage Vds: -30 V
• Number of Pins: 8
• On State Resistance: 8.1 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5.7 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SI4425DDYT1GE3, SI4425DDY T1 GE3