Datasheet SI4628DY-T1-GE3 - Vishay MOSFET DI, N CH, 30 V, 38 A, 8SOIC

Detailed Description

Manufacturer: Vishay

Description: MOSFET DI, N CH, 30 V, 38 A, 8SOIC

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Docket:
Si4628DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.0030 at VGS = 10 V 0.0038 at VGS = 4.5 V ID (A)a 38 33 Qg (Typ.) 27.5 nC

Specifications:

• Current Id Max: 38 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 2.4 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 7.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SI4628DYT1GE3, SI4628DY T1 GE3