Datasheet SI7404DN-T1-GE3 - Vishay MOSFET, N, POWERPAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, POWERPAK

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Docket:
Si7404DN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.013 at VGS = 10 V 30 0.015 at VGS = 4.5 V 0.022 at VGS = 2.5 V ID (A) 13.3 12.4 10.2

Specifications:

• Continuous Drain Current Id: 8.5 A
• Current Id Max: 8.5 A
• Current Temperature: 25°C
• Device Marking: SI7404DN
• Drain Source Voltage Vds: 30 V
• External Depth: 3.3 mm
• External Length / Height: 1.07 mm
• External Width: 3.3 mm
• Fall Time tf: 33 ns
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 1.9 °C/W
• Mounting Type: SMD
• N-channel Gate Charge: 20nC
• Number of Pins: 8
• On State Resistance Max: 13 MOhm
• On State Resistance: 13 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: 8-PowerPAK 1212
• Power Dissipation Pd: 1.5 W
• Pulse Current Idm: 40 A
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 39 ns
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Polarity: N Channel
• Turn Off Time: 64 ns
• Turn On Time: 27 ns
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.5 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 0.6 V

RoHS: Yes

Accessories:

• LICEFA - V11-7
• Roth Elektronik - RE932-01

Other Names:

SI7404DNT1GE3, SI7404DN T1 GE3