Datasheet SI7461DP-T1-GE3 - Vishay MOSFET, P, POWERPAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P, POWERPAK

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Docket:
Si7461DP
Vishay Siliconix
P-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 60 RDS(on) () 0.0145 at VGS = - 10 V 0.019 at VGS = - 4.5 V ID (A) - 14.4 - 12.6

Simulation Model

Specifications:

• Continuous Drain Current Id: 8.6 A
• Current Id Max: 8.6 A
• Current Temperature: 25°C
• Device Marking: SI7461DP
• Drain Source Voltage Vds: 60 V
• External Depth: 5.15 mm
• External Length / Height: 1.07 mm
• External Width: 6.15 mm
• Fall Time tf: 90 ns
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Junction to Case Thermal Resistance A: 1 °C/W
• Mounting Type: SMD
• Number of Pins: 8
• On State Resistance Max: 15 MOhm
• On State Resistance: 19 MOhm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 121nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.9 W
• Pulse Current Idm: 60 A
• Rds(on) Test Voltage Vgs: -10 V
• Rise Time: 20 ns
• Threshold Voltage Vgs Typ: -3 V
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: P Channel
• Turn Off Time: 205 ns
• Turn On Time: 20 ns
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: -3 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: -1 V

RoHS: Yes

Accessories:

• LICEFA - V11-7-6-10
• LICEFA - V11-7
• Roth Elektronik - RE932-01

Other Names:

SI7461DPT1GE3, SI7461DP T1 GE3