Datasheet SSM6K06FU(TE85L,F) - Toshiba MOSFET, N CH, 1.1 A, 20 V, SOT23

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 1.1 A, 20 V, SOT23

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Docket:
SSM6K06FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6K06FU
High Speed Switching Applications
· · · Small package Low ON- resistance: RDS(ON) = 160 m max (@VGS = 4 V) : RDS(ON) = 210 m max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm

Specifications:

• Continuous Drain Current Id: 1.1 A
• Current Id Max: 1.1 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 160 MOhm
• Package / Case: US6
• Power Dissipation: 300 mW
• Rds(on) Test Voltage Vgs: 4 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.1 V
• Transistor Case Style: US6
• Transistor Polarity: N Channel
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 12 V
• Voltage Vgs Rds on Measurement: 4 V

RoHS: Yes

Other Names:

SSM6K06FU(TE85LF), SSM6K06FU(TE85L F)