Datasheet TK5P53D(T6RSS-Q) - Toshiba MOSFET, N CH, 525 V, 5 A, DP(0S)

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 525 V, 5 A, DP(0S)

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Docket:
TK5P53D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS)
TK5P53D
Switching Regulator Applications
· · · · Low drain-source ON-resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: Yfs = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Specifications:

• Current Id Max: 5 A
• Drain Source Voltage Vds: 525 V
• Number of Pins: 3
• On State Resistance: 1.2 Ohm
• Power Dissipation Pd: 80 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: D-PAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 30 V

RoHS: Y-Ex

Other Names:

TK5P53D(T6RSSQ), TK5P53D(T6RSS Q)