Datasheet TK60D08J1(Q) - Toshiba MOSFET, N CH, 75 V, 60 A, SC-67

Detailed Description

Manufacturer: Toshiba

Description: MOSFET, N CH, 75 V, 60 A, SC-67

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Docket:
TK60D08J1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOS)
TK60D08J1
Switching Regulator Application
· · · · · · High-Speed switching Small gate charge: Qg = 86 nC (typ.) Low drain-source ON resistance: RDS (ON) = 6.2 m (typ.) High forward transfer admittance: |Yfs| = 120 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 75 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA) Unit: mm

Specifications:

• Current Id Max: 60 A
• Drain Source Voltage Vds: 75 V
• Number of Pins: 3
• On State Resistance: 6.2 MOhm
• Power Dissipation Pd: 140 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SC-67
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Y-Ex

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