Datasheet VS-FB180SA10P - Vishay MOSFET, N, SOT-227

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SOT-227

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Docket:
PD- 91651C
FB180SA10
HEXFET® Power MOSFET
l l l l l l l l
Fully Isolated Package Easy to Use and Parallel Very Low On-Resistance Dynamic dv/dt Rating Fully Avalanche Rated Simple Drive Requirements Low Drain to Case Capacitance Low Internal Inductance

Specifications:

• Continuous Drain Current Id: 180 A
• Current Id Max: 180 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 100 V
• Full Power Rating Temperature: 25°C
• Mounting Type: Screw
• Number of Pins: 4
• Number of Transistors: 1
• On State Resistance: 6.5 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: ISOTOP
• Power Dissipation Pd: 480 W
• Pulse Current Idm: 720 A
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: ISOTOP
• Transistor Polarity: N Channel
• Voltage Vds Typ: 100 V
• Voltage Vgs Max: 4 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 4 V

RoHS: Yes

Accessories:

• Panasonic - EYGA121807A
• SCHRODER - 20900

Other Names:

VSFB180SA10P, VS FB180SA10P