Datasheet SQS401EN-T1-GE3 - Vishay MOSFET, P CH, W DIODE, 40 V, 16 A, PP1212

Detailed Description

Manufacturer: Vishay

Description: MOSFET, P CH, W DIODE, 40 V, 16 A, PP1212

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Docket:
SQS401EN
Vishay Siliconix
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration

Specifications:

• Continuous Drain Current Id: -16 A
• Drain Source Voltage Vds: -40 V
• Number of Pins: 8
• On State Resistance: 0.02 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 62.5 W
• Rds(on) Test Voltage Vgs: -10 V
• Transistor Case Style: PowerPAK 1212
• Transistor Polarity: P Channel
• Voltage Vgs Max: -20 V

RoHS: Yes

Other Names:

SQS401ENT1GE3, SQS401EN T1 GE3