Datasheet SI4925BDY-T1-E3 - Vishay MOSFET, DUAL, PP, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, SO-8

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Docket:
Si4925BDY
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.025 at VGS = - 10 V 0.041 at VGS = - 4.5 V ID (A) - 7.1 - 5.5

Specifications:

• Continuous Drain Current Id: 7.1 A
• Current Id Max: -7.1 A
• Drain Source Voltage Vds: -30 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 25 MOhm
• Package / Case: SO-8
• Power Dissipation Pd: 1.1 W
• Rds(on) Test Voltage Vgs: -10 V
• Rise Time: 12 ns
• Transistor Case Style: SOIC
• Transistor Polarity: P Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Other Names:

SI4925BDYT1E3, SI4925BDY T1 E3