Datasheet SI7119DN-T1-GE3 - Vishay P CH MOSFET, -200 V, 3.8 A, POWERPAK

Detailed Description

Manufacturer: Vishay

Description: P CH MOSFET, -200 V, 3.8 A, POWERPAK

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Docket:
Si7119DN
Vishay Siliconix
P-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 200 RDS(on) () 1.05 at VGS = - 10 V 1.10 at VGS = - 6.0V ID (A) - 3.8e - 3.6e Qg (Typ.) 10.6 nC

Specifications:

• Continuous Drain Current Id: -3.8 A
• Drain Source Voltage Vds: -200 V
• On Resistance Rds(on): 1.1 Ohm
• Rds(on) Test Voltage Vgs: -6 V
• Threshold Voltage Vgs Typ: -4 V
• Transistor Polarity: P Channel

RoHS: Y-Ex

Other Names:

SI7119DNT1GE3, SI7119DN T1 GE3