Datasheet SI7491DP-T1-GE3 - Vishay P CHANNEL MOSFET, -30 V, 18 A, SOIC

Detailed Description

Manufacturer: Vishay

Description: P CHANNEL MOSFET, -30 V, 18 A, SOIC

Specifications:

• Continuous Drain Current Id: 18 A
• Drain Source Voltage Vds: -30 V
• On Resistance Rds(on): 13 MOhm
• Rds(on) Test Voltage Vgs: -4.5 V
• Threshold Voltage Vgs Typ: -3 V
• Transistor Polarity: P Channel

RoHS: Y-Ex

Other Names:

SI7491DPT1GE3, SI7491DP T1 GE3