Datasheet SI2334DS-T1-GE3 - Vishay MOSFET, N CH, 30 V, 4.9 A, DIODE, SOT23

Vishay SI2334DS-T1-GE3

Part Number: SI2334DS-T1-GE3

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, 30 V, 4.9 A, DIODE, SOT23

data sheetDownload Data Sheet

Docket:
New Product
Si2334DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

  • Current Id Max: 4.2 A
  • Drain Source Voltage Vds: 30 V
  • Number of Pins: 3
  • On State Resistance: 0.035 Ohm
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation Pd: 1.3 W
  • Rds(on) Test Voltage Vgs: 4.5 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: N Channel
  • Voltage Vgs Max: 8 V

RoHS: Yes

Accessories:

  • Analog Devices - ADP3623ARDZ-RL

Other Names:

SI2334DST1GE3, SI2334DS T1 GE3