Datasheet SI4484EY-T1-GE3 - Vishay MOSFET, N CH, DIODE, 100 V, 6.9 A, 8-SOIC

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 100 V, 6.9 A, 8-SOIC

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Docket:
Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.034 at VGS = 10 V 0.040 at VGS = 6.0 V ID (A) 6.9 6.4

Specifications:

• Current Id Max: 6.9 A
• Drain Source Voltage Vds: 100 V
• Number of Pins: 8
• On State Resistance: 0.028 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 3.8 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fischer Elektronik - FK 244 13 D2 PAK
• Vishay - SI7942DP-T1-E3

Other Names:

SI4484EYT1GE3, SI4484EY T1 GE3