Datasheet SI4850EY-T1-GE3 - Vishay MOSFET, N CH, DIODE, 60 V, 8.5 A, 8-SOIC

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 60 V, 8.5 A, 8-SOIC

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Docket:
Si4850EY
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.022 at VGS = 10 V 0.031 at VGS = 4.5 V ID (A) 8.5 7.2

Specifications:

• Current Id Max: 8.5 A
• Drain Source Voltage Vds: 60 V
• Number of Pins: 8
• On State Resistance: 0.018 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 3.3 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Diodes - ZXMN6A11DN8TA
• Fischer Elektronik - FK 244 13 D2 PAK

Other Names:

SI4850EYT1GE3, SI4850EY T1 GE3