Datasheet SI7434DP-T1-GE3 - Vishay N CHANNEL MOSFET, 250 V, 3.8 A, SOIC

Detailed Description

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 250 V, 3.8 A, SOIC

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Docket:
Si7434DP
Vishay Siliconix
N-Channel 250-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 250 RDS(on) () 0.155 at VGS = 10 V 0.162 at VGS = 6 V ID (A) 3.8 3.7

Specifications:

• Continuous Drain Current Id: 3.8 A
• Drain Source Voltage Vds: 250 V
• On Resistance Rds(on): 162 MOhm
• Rds(on) Test Voltage Vgs: 6 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Polarity: N Channel
• RoHS: Y-Ex

Other Names:

SI7434DPT1GE3, SI7434DP T1 GE3