Datasheet SI7460DP-T1-GE3 - Vishay MOSFET, N, PPAK SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, PPAK SO-8

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Docket:
Si7460DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 60 RDS(on) () 0.0096 at VGS = 10 V 0.012 at VGS = 4.5 V ID (A) 18 16

Specifications:

• Continuous Drain Current Id: 18 A
• Current Id Max: 11 A
• Drain Source Voltage Vds: 60 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 8
• On Resistance Rds(on): 9.6 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: PowerPAK
• Power Dissipation: 1.9 W
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 16 ns
• SVHC: No SVHC (20-Jun-2011)
• Transistor Case Style: PowerPAK SO
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Other Names:

SI7460DPT1GE3, SI7460DP T1 GE3