Datasheet SI7774DP-T1-GE3 - Vishay MOSFET, N CH, SC DI, 30 V, 60 A, SO8 PPAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, SC DI, 30 V, 60 A, SO8 PPAK

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Docket:
New Product
Si7774DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY

Specifications:

• Current Id Max: 27 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 3100µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fairchild - FDS6900AS
• Fischer Elektronik - FK 244 13 D2 PAK

Other Names:

SI7774DPT1GE3, SI7774DP T1 GE3