Datasheet SIHP18N50C-E3 - Vishay N CHANNEL MOSFET, 560 V, 18 A

Detailed Description

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 560 V, 18 A

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Docket:
SiHP18N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max.

RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 76 21 29 Single

Specifications:

• Continuous Drain Current Id: 18 A
• Drain Source Voltage Vds: 560 V
• On Resistance Rds(on): 225 MOhm
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 5 V
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

SIHP18N50CE3, SIHP18N50C E3