Datasheet SIR422DP-T1-GE3 - Vishay MOSFET, N CH, DIODE, 40 V, 40 A, PPAKSO8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 40 V, 40 A, PPAKSO8

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Docket:
SiR422DP
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.0066 at VGS = 10 V 0.008 at VGS = 4.5 V ID (A)a 40 16.1 nC 40 Qg (Typ.)

Specifications:

• Current Id Max: 20.5 A
• Drain Source Voltage Vds: 40 V
• Number of Pins: 8
• On State Resistance: 5400µ Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 5 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Fairchild - FDS8949
• Fischer Elektronik - FK 244 13 D2 PAK

Other Names:

SIR422DPT1GE3, SIR422DP T1 GE3