Datasheet SIS414DN-T1-GE3 - Vishay MOSFET, N CH, DIODE, 30 V, 20 A, PPAK1212-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, DIODE, 30 V, 20 A, PPAK1212-8

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Docket:
New Product
SiS414DN
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY

Specifications:

• Current Id Max: 10.8 A
• Drain Source Voltage Vds: 30 V
• Number of Pins: 8
• On State Resistance: 0.013 Ohm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Pd: 3.4 W
• Rds(on) Test Voltage Vgs: 4.5 V
• Transistor Case Style: PowerPAK 1212
• Transistor Polarity: N Channel
• Voltage Vgs Max: 12 V

RoHS: Yes

Accessories:

• Analog Devices - ADP3623ARDZ-RL
• Electrolube - SMA10SL

Other Names:

SIS414DNT1GE3, SIS414DN T1 GE3