Datasheet SQJ412EP-T1-GE3 - Vishay MOSFET, N CH, W DIODE, 40 V, 32 A, POPAK8L
Part Number: SQJ412EP-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, N CH, W DIODE, 40 V, 32 A, POPAK8L
Docket:
SQJ412EP
Vishay Siliconix
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration
Specifications:
- Continuous Drain Current Id: 32 A
- Drain Source Voltage Vds: 40 V
- Number of Pins: 8
- On State Resistance: 0.0034 Ohm
- Operating Temperature Range: -55°C to +175°C
- Power Dissipation Pd: 83 W
- Rds(on) Test Voltage Vgs: 10 V
- Transistor Case Style: PowerPAK SO
- Transistor Polarity: N Channel
- Voltage Vgs Max: 20 V
RoHS: Yes
Other Names:
SQJ412EPT1GE3, SQJ412EP T1 GE3