Datasheet SQM110N05-06L-GE3 - Vishay MOSFET, N CH, W DIODE, 55 V, 110 A, TO-263

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N CH, W DIODE, 55 V, 110 A, TO-263

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Docket:
SQM110N05-06L
Vishay Siliconix
Automotive N-Channel 55 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 55 0.006 0.010 110 Single

Specifications:

• Continuous Drain Current Id: 110 A
• Drain Source Voltage Vds: 55 V
• Number of Pins: 3
• On State Resistance: 0.0047 Ohm
• Operating Temperature Range: -55°C to +175°C
• Power Dissipation Pd: 157 W
• Rds(on) Test Voltage Vgs: 10 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Voltage Vgs Max: 20 V

RoHS: Yes

Other Names:

SQM110N0506LGE3, SQM110N05 06L GE3