Datasheet SI7386DP-T1-GE3 - Vishay N CHANNEL MOSFET, 30 V, 19 A, SOIC

Detailed Description

Manufacturer: Vishay

Description: N CHANNEL MOSFET, 30 V, 19 A, SOIC

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Docket:
Si7386DP
Vishay Siliconix
N-Channel Reduced Qg, Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) 30 RDS(on) () 0.007 at VGS = 10 V 0.0095 at VGS = 4.5 V ID (A) 19 17 Qg (Typ.) 11.5

Specifications:

• Continuous Drain Current Id: 19 A
• Drain Source Voltage Vds: 30 V
• On Resistance Rds(on): 9.5 MOhm
• Rds(on) Test Voltage Vgs: 4.5 V
• Threshold Voltage Vgs Typ: 2.5 V
• Transistor Polarity: N Channel

RoHS: Y-Ex

Other Names:

SI7386DPT1GE3, SI7386DP T1 GE3