Datasheet SI7866ADP-T1-GE3 - Vishay N CH MOSFET
Part Number: SI7866ADP-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: N CH MOSFET
Specifications:
- Continuous Drain Current Id: 40 A
- Drain Source Voltage Vds: 20 V
- On Resistance Rds(on): 3 MOhm
- Power Dissipation Pd: 5.4 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 800 mV
- Transistor Polarity: N Channel
RoHS: Y-Ex
Other Names:
SI7866ADPT1GE3, SI7866ADP T1 GE3
