Datasheet SI9410BDY-T1-GE3 - Vishay N CH MOSFET
Part Number: SI9410BDY-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: N CH MOSFET
Specifications:
- Continuous Drain Current Id: 8.1 A
- Drain Source Voltage Vds: 30 V
- On Resistance Rds(on): 24 MOhm
- Power Dissipation Pd: 2.5 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Threshold Voltage Vgs Typ: 1 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
Other Names:
SI9410BDYT1GE3, SI9410BDY T1 GE3
