Datasheet SI1012R - Vishay MOSFET, N, SC-75A
Part Number: SI1012R
Detailed Description
Manufacturer: Vishay
Description: MOSFET, N, SC-75A
Docket:
Si1012R/X
Vishay Siliconix
N-Channel 1.8 V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () 0.70 at VGS = 4.5 V 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V ID (mA) 600 500 350
Specifications:
- Continuous Drain Current Id: 500 mA
- Current Id Max: 500 mA
- Drain Source Voltage Vds: 20 V
- ESD HBM: 2 kV
- External Depth: 1.7 mm
- External Length / Height: 0.8 mm
- External Width: 1.6 mm
- Junction Temperature Tj Max: 150°C
- Junction Temperature Tj Min: -55°C
- Mounting Type: SMD
- On Resistance Rds(on): 1.25 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SC-75
- Power Dissipation Pd: 150 mW
- Power Dissipation Ptot Max: 150 W
- Pulse Current Idm: 1 A
- Rds(on) Test Voltage Vgs: 4.5 V
- SMD Marking: C
- Threshold Voltage Vgs Typ: 900 mV
- Transistor Case Style: SC-75
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vgs Max: 6 V
- Voltage Vgs Rds on Measurement: 1.8 V
- Voltage Vgs th Min: 0.45 V
RoHS: Yes
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