Datasheet SI4894BDY-T1-E3 - Vishay MOSFET, N, SO-8

Detailed Description

Manufacturer: Vishay

Description: MOSFET, N, SO-8

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Specifications:

• Continuous Drain Current Id: 12 A
• Current Id Max: 8.9 A
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• On Resistance Rds(on): 11 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC-8
• Power Dissipation Pd: 1.4 W
• Rds(on) Test Voltage Vgs: 10 V
• Rise Time: 10 ns
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 3 V
• Voltage Vgs th Min: 1 V

RoHS: Yes

Accessories:

• International Rectifier - IRF8714PBF
• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A

Other Names:

SI4894BDYT1E3, SI4894BDY T1 E3