Datasheet DMS3019SSD-13 - Diodes MOSFET, +SCH, NN CH, 30 V, SO8

Detailed Description

Manufacturer: Diodes

Description: MOSFET, +SCH, NN CH, 30 V, SO8

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Docket:
DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
· DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: · Low RDS(on) ­ minimizes conduction loss · Low VSD ­ reducing the losses due to body diode construction · Low Qrr ­ lower Qrr of the integrated Schottky reduces body diode switching losses · Low gate capacitance (Qg/Qgs) ratio ­ reduces risk of shootthrough or cross conduction currents at high frequencies · Avalanche rugged ­ IAR and EAR rated Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data

Specifications:

• Continuous Drain Current Id, N Channel: 7 A
• Current Id Max: 9 A
• Drain Source Voltage Vds, N Channel: 30 V
• Drain Source Voltage Vds: 30 V
• Module Configuration: Dual
• Number of Pins: 8
• On Resistance Rds(on), N Channel: 0.01 Ohm
• On Resistance Rds(on): 10 MOhm
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation: 1.19 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 2.4 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel

RoHS: Yes

Other Names:

DMS3019SSD13, DMS3019SSD 13