Datasheet NDC7002N - Fairchild MOSFET

Detailed Description

Manufacturer: Fairchild

Description: MOSFET

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Docket:
March 1996
NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage applications requiring a low current high side switch.
Features

Specifications:

• Continuous Drain Current, Id: 0.51 A
• Drain Source Voltage, Vds: 50 V
• On Resistance, Rds(on): 2 Ohm
• Power Dissipation, Pd: 0.9 W
• Rds(on) Test Voltage, Vgs: 10 V
• Threshold Voltage, Vgs Typ: 1.9 V

RoHS: Yes