Datasheet NDS8936 - Fairchild MOSFET, DUAL, NN, LOGIC, SO-8

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, DUAL, NN, LOGIC, SO-8

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Docket:
June 1997
NDS8936 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: 6.7 A
• Current Id Max: 5.3 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 30 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Pin Configuration: c
• Pin Format: 1 S1
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 15 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: NDS8936
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.6 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th N Channel 1 Min: 2.8 V
• Voltage Vgs th N Channel 2 Min: 2.8 V

RoHS: Yes

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