Datasheet NDS9956A - Fairchild MOSFET, DUAL, NN, LOGIC, SO-8

Detailed Description

Manufacturer: Fairchild

Description: MOSFET, DUAL, NN, LOGIC, SO-8

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Docket:
February 1996
NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC/DC conversion and DC motor control where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: 3.7 A
• Current Id Max: 3.7 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• External Depth: 5.2 mm
• External Length / Height: 1.75 mm
• External Width: 4.05 mm
• Full Power Rating Temperature: 25°C
• Module Configuration: Dual
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On Resistance Rds(on): 80 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOIC
• Pin Configuration: c
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 15 A
• Rds(on) Test Voltage Vgs: 10 V
• Row Pitch: 6.3 mm
• SMD Marking: NDS9956A
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: SOIC
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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