Datasheet SI7945DP-T1-GE3 - Vishay MOSFET, DUAL, PP, POWERPAK

Detailed Description

Manufacturer: Vishay

Description: MOSFET, DUAL, PP, POWERPAK

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Docket:
Si7945DP
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) - 30 RDS(on) () 0.020 at VGS = - 10 V 0.031 at VGS = - 4.5 V ID (A) - 10.9 49 - 8.8 Qg (Typ.)

Simulation Model

Specifications:

• Cont Current Id: 7 A
• Current Temperature: 25°C
• Device Marking: SI7945DP
• External Depth: 5.15 mm
• External Length / Height: 1.07 mm
• External Width: 6.15 mm
• Full Power Rating Temperature: 25°C
• Junction to Case Thermal Resistance A: 2.5 °C/W
• Max Current Id: 7 A
• Max Junction Temperature Tj: 150°C
• Max On State Resistance: 0.02 Ohm
• Max Voltage Vds: 30 V
• Max Voltage Vgs: 3 V
• Min Junction Temperature, Tj: -55°C
• Min Voltage Vgs th: -1 V
• Mounting Type: SMD
• Number of Pins: 8
• Number of Transistors: 2
• On State Resistance: 0.02 Ohm
• Operating Temperature Range: -55°C to +150°C
• P Channel Gate Charge: 49nC
• Package / Case: SOIC
• Power Dissipation Pd: 1.4 W
• Power Dissipation: 1.4 W
• Pulse Current Idm: 30 A
• Rds Measurement Voltage: -10 V
• Transistor Case Style: SOIC PowerPAK
• Transistor Polarity: Dual P
• Transistor Type: MOSFET
• Typ Voltage Vds: -30 V
• Typ Voltage Vgs th: -3 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Other Names:

SI7945DPT1GE3, SI7945DP T1 GE3