Datasheet SI9926CDY-T1-E3 - Vishay MOSFET, DUAL, NN, SO-8
Part Number: SI9926CDY-T1-E3
Detailed Description
Manufacturer: Vishay
Description: MOSFET, DUAL, NN, SO-8
Docket:
New Product
Si9926CDY
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
Specifications:
- Continuous Drain Current Id: 8 A
- Current Id Max: 8 A
- Drain Source Voltage Vds: 20 V
- Junction Temperature Tj Max: 150°C
- Module Configuration: Dual
- Mounting Type: SMD
- Number of Pins: 8
- On Resistance Rds(on): 18 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SO-8
- Power Dissipation: 3.1 W
- Rds(on) Test Voltage Vgs: 4.5 V
- Rise Time: 10 ns
- SVHC: No SVHC (20-Jun-2011)
- Threshold Voltage Vgs Typ: 1.5 V
- Transistor Case Style: SOIC
- Transistor Polarity: N Channel
- Voltage Vds Typ: 20 V
- Voltage Vgs Rds on Measurement: 4.5 V
- Voltage Vgs th Max: 1.5 V
- Voltage Vgs th Min: 0.6 V
RoHS: Yes
Other Names:
SI9926CDYT1E3, SI9926CDY T1 E3