Datasheet SI3861BDV-T1-GE3 - Vishay DUAL N/P CH MOSFET
Part Number: SI3861BDV-T1-GE3
Detailed Description
Manufacturer: Vishay
Description: DUAL N/P CH MOSFET
Specifications:
- Continuous Drain Current Id: 2.3 A
- Drain Source Voltage Vds: 20 V
- On Resistance Rds(on): 145 MOhm
- Power Dissipation Pd: 830 mW
- Rds(on) Test Voltage Vgs: 4.5 V
- Transistor Polarity: N and P Channel
RoHS: Yes
Other Names:
SI3861BDVT1GE3, SI3861BDV T1 GE3
