Datasheet SI4561DY-T1-GE3 - Vishay NPN/PNP MOSFET, 40 V, SOIC

Detailed Description

Manufacturer: Vishay

Description: NPN/PNP MOSFET, 40 V, SOIC

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Docket:
Si4561DY
Vishay Siliconix
N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) N-Channel P-Channel 40 - 40 RDS(on) () 0.0355 at VGS = 10 V 0.0425 at VGS = 4.5 V 0.035 at VGS = - 10 V 0.047 at VGS = - 4.5 V ID (A)a 6.8 6.2 - 7.2 - 6.2 Qg (Typ.) 5.3

Simulation Model

Specifications:

• Continuous Drain Current Id: 6.8 A
• Drain Source Voltage Vds: 40 V
• On Resistance Rds(on): 29.5 MOhm
• Rds(on) Test Voltage Vgs: 20 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Polarity: N and P Channel

RoHS: Y-Ex

Other Names:

SI4561DYT1GE3, SI4561DY T1 GE3