Datasheet SI7960DP-T1-E3 - Vishay DUAL N CHANNEL MOSFET, 60 V, SOIC
Part Number: SI7960DP-T1-E3
Detailed Description
Manufacturer: Vishay
Description: DUAL N CHANNEL MOSFET, 60 V, SOIC
Specifications:
- Continuous Drain Current Id: 9.7 A
- Drain Source Voltage Vds: 60 V
- On Resistance Rds(on): 25 MOhm
- Rds(on) Test Voltage Vgs: 20 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Polarity: N Channel
RoHS: Y-Ex
Other Names:
SI7960DPT1E3, SI7960DP T1 E3
