Datasheet NTE929 - NTE Electronics TRANSISTOR ARRAY, NPN, 5, 15 V, DIP

Detailed Description

Manufacturer: NTE Electronics

Description: TRANSISTOR ARRAY, NPN, 5, 15 V, DIP

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NTE929 Integrated Circuit General Purpose, High Current, NPN Transistor Array
Description: The NTE929 is a versatile array of five high­current (to 100mA) NPN transistors on a common monolithic substrate.

In addition, two of these transistors (Q1 and Q2) are matched at low currents (i.e. 1mA) for applications in which offset parameters are of special importance. Independent connections for each transistors plus a separate terminal for the substrate permit maximum flexibility in circuit design. Features: D High IC 100mA max D Low VCEsat (at 50mA) 0.7V max. D Matched pair (Q1 and Q2) V10 (VBE matched): ±5mV max. I10 (at 1mA): 2.5µA max. D 5 independent transistors plus separate substrate connection. Applications: D Signal processing and switching systems operating from DC to VHF D Lamp and relay driver D Differential amplifier D Temperature­compensated amplifier D Thyristor firing Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation, PD Any One Transistor .

Specifications:

• Collector Emitter Voltage V(br)ceo: 15 V
• DC Collector Current: 20 mA
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 750 mW
• Transistor Polarity: NPN
• Transition Frequency Typ ft: 450 MHz