Datasheet NTE916 - NTE Electronics Transistor Array IC

Detailed Description

Manufacturer: NTE Electronics

Description: Transistor Array IC

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Docket:
NTE916 Integrated Circuit High Current, NPN Transistor Array, Common Emitter
Description: The NTE916 is a high current transistor array in a 16­Lead DIP type package consisting of seven silicon NPN transistors on a common monolithic substrate connected in a common­emitter configuration designed for directly driving seven­segment displays and light­emitting diodes (LED) displays.

This device is also well suited for a variety of other drive applications including relay control and thyristor firing. Features: D Seven Transistors Permit a Wide Range of Applications D High Collector Current: IC = 100mA Max D Low Collector­Emitter Saturation Voltage: VCE(sat) = 400mV Typ @ 50mA Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Power Dissipation (Total Package), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750mW Per Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 16 V
• Current Ic Continuous a Max: 100 mA
• DC Collector Current: 100 mA
• DC Current Gain: 40
• Module Configuration: Seven
• Mounting Type: Through Hole
• Number of Pins: 16
• Number of Transistors: 7
• Operating Temperature Range: -55°C to +125°C
• Package / Case: 16-DIP
• Power Dissipation Pd: 750 mW
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: DIP
• Transistor Polarity: NPN