Datasheet PUMF12 - NXP TRANSISTOR, DIGITAL, DUAL, SOT-363

Detailed Description

Manufacturer: NXP

Description: TRANSISTOR, DIGITAL, DUAL, SOT-363

Specifications:

• Collector-to-Emitter Breakdown Voltage: 50 V
• DC Current Gain Min: 120
• DC Current Gain: 1 mA
• Frequency: 100 Hz
• Max Current Gain Hfe: 80
• Max Current Ic Continuous a: 100 mA
• Max Current Ic TR2: 100 mA
• Max Current Ic: 100 mA
• Max Power Dissipation Ptot: 200 mW
• Mounting Type: SMD
• Number of Pins: 6
• Package / Case: SOT-363
• Power Dissipation Ptot for TR2: 200 mW
• Resistance R1: 22 kOhm
• Resistance R2: 47 kOhm
• Transistor Case Style: SOT-363
• Transistor Polarity TR2: NPN
• Transistor Polarity: PNP
• Transistor Type: Small Signal Digital
• Voltage Vcbo: 50 V
• Voltage Vceo TR2: 50 V

RoHS: Yes