Datasheet DB103G - Taiwan Semiconductor BRIDGE RECTIFIER, 1 A, 200 V

Detailed Description

Manufacturer: Taiwan Semiconductor

Description: BRIDGE RECTIFIER, 1 A, 200 V

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Docket:
DB101G THRU DB107G
Single Phase 1.0 AMP.

Glass Passivated Bridge Rectifiers
Voltage Range 50 to 1000 Volts Current 1.0 Ampere
Features a a a a a a a UL Recognized File # E-96005 Ideal for printed circuit board Reliable low cost construction utilizing molded plastic technique High temperature soldering guaranteed: 250°C / 10 seconds / 0.375" ( 9.5mm ) lead length at 5 lbs., ( 2.3 kg ) tension Small size, simple installation Leads solderable per MIL-STD-202, Method 208 High surge current capability
DB

Specifications:

• Body Height Max: 3.3 mm
• Device Marking: DB103G
• Diode Mounting Type: Through Hole
• Diode Type: Bridge rectifier, single phase
• External Depth: 6.5 mm
• External Length / Height: 3.3 mm
• External Width: 8.51 mm
• Forward Current If(AV): 1 A
• Forward Surge Current Ifsm Max: 30 A
• Forward Voltage VF Max: 1.1 V
• Mounting Type: Through Hole
• Number of Phases: Single
• Number of Pins: 4
• Operating Temperature Range: -55°C to +150°C
• Output Current Max: 1 A
• Package / Case: DIL
• RMS Input Voltage: 140 V
• Repetitive Reverse Voltage Vrrm Max: 200 V
• SVHC: No SVHC (15-Dec-2010)

RoHS: Yes