Datasheet IRG7PH35UD1PBF - International Rectifier IGBT, N CH, DIODE, 1200 V, 50 A, TO-247AC

Detailed Description

Manufacturer: International Rectifier

Description: IGBT, N CH, DIODE, 1200 V, 50 A, TO-247AC

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Docket:
PD - 97455
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
IRG7PH35UD1PbF IRG7PH35UD1-EP
VCES = 1200V I NOMINAL = 20A
Features

Specifications:

• Collector Emitter Voltage V(br)ceo: 1.2 kV
• Collector Emitter Voltage Vces: 1.9 V
• DC Collector Current: 50 A
• Number of Pins: 3
• Operating Temperature Range: -55°C to +150°C
• Power Dissipation Max: 179 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-247AC
• Transistor Type: IGBT

RoHS: Yes

Accessories:

• MULTICORE (SOLDER) - 1399075-M
• Weller - 0051383199