Datasheet IDH08SG60C - Infineon DIODE, SCHOTTKY, 600 V, 8 A, TO220-2
Part Number: IDH08SG60C
Detailed Description
Manufacturer: Infineon
Description: DIODE, SCHOTTKY, 600 V, 8 A, TO220-2
Docket:
IDH08SG60C
3rd Generation thinQ!TM SiC Schottky Diode
Features · Revolutionary semiconductor material - Silicon Carbide · Switching behavior benchmark · No reverse recovery / No forward recovery · Temperature independent switching behavior · High surge current capability · Pb-free lead plating; RoHS compliant · Qualified according to JEDEC1) for target applications · Breakdown voltage tested at 20mA2) · Optimized for high temperature operation · Lowest Figure of Merit QC/IF Product Summary V DC QC I F; T C< 130 °C 600 12 8 V nC A
thinQ! 3G Diode designed for fast switching applications like: · SMPS e.g.; CCM PFC · Motor Drives; Solar Applications; UPS Type IDH08SG60C Package PG-TO220-2 Marking D08G60C Pin 1 C Pin 2 A
Maximum ratings Parameter Continuous forward current Symbol Conditions IF T C<130 °C T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms T C=25 °C, t p=10 µs T C=25 °C, t p=10 ms T C=150 °C, t p=10 ms V RRM dv/ dt P tot T j, T stg T sold 1.6mm (0.063 in.) from case for 10s M3 an
Specifications:
- Diode Type: Schottky
- Forward Current If(AV): 8 A
- Forward Surge Current Ifsm Max: 42 A
- Forward Voltage VF Max: 2.1 V
- Number of Pins: 2
- Operating Temperature Range: -55°C to +175°C
- Package / Case: TO-220
- Repetitive Reverse Voltage Vrrm Max: 600 V
- Reverse Recovery Time trr Max: 10 ns
RoHS: Yes
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