Datasheet ADA4891-1, ADA4891-2, ADA4891-3, ADA4891-4 (Analog Devices) - 7

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Data Sheet ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4 ABSOLUTE MAXIMUM RATINGS Table 3.
To ensure proper operation, it is necessary to observe the maxi-
Parameter Rating
mum power derating curves shown in Figure 6. These curves are derived by setting T Supply Voltage 6 V J = 150°C in Equation 1. Figure 6 shows the maximum safe power dissipation in the package vs. the Input Voltage (Common Mode) −VS − 0.5 V to +VS ambient temperature on a JEDEC standard 4-layer board. Differential Input Voltage ±VS Storage Temperature Range −65°C to +125°C
2.0 TJ = 150°C
Operating Temperature Range −40°C to +125°C
14-LEAD TSSOP
Lead Temperature (Soldering, 10 sec) 300°C
W) ( 1.5
Stresses at or above those listed under Absolute Maximum
TION 8-LEAD SOIC_N PA
Ratings may cause permanent damage to the product. This is a
ISSI
stress rating only; functional operation of the product at these
D 1.0
or any other conditions above those indicated in the operational
ER 8-LEAD MSOP W
section of this specification is not implied. Operation beyond
M PO 5-LEAD SOT-23
the maximum operating conditions for extended periods may
MU 0.5 XI
affect product reliability.
14-LEAD SOIC_N MA MAXIMUM POWER DISSIPATION 0
The maximum power that can be safely dissipated by the
–55 –35 –15 5 25 45 65 85 105 125
002 ADA4891-1/ADA4891-2/ADA4891-3/ADA4891-4 is limited
AMBIENT TEMPERATURE (°C)
08054- by the associated rise in junction temperature. The maximum Figure 6. Maximum Power Dissipation vs. Ambient Temperature safe junction temperature for plastic encapsulated devices is Table 4 lists the thermal resistance (θJA) for each ADA4891-1/ determined by the glass transition temperature of the plastic, ADA4891-2/ADA4891-3/ADA4891-4 package. approximately 150°C. Temporarily exceeding this limit can cause a shift in parametric performance due to a change in the
Table 4.
stresses exerted on the die by the package. Exceeding a junction
Package Type θJA Unit
temperature of 175°C for an extended period can result in 5-Lead SOT-23 146 °C/W device failure. 8-Lead SOIC_N 115 °C/W The still-air thermal properties of the package (θ 8-Lead MSOP 133 °C/W JA), the ambient temperature (T 14-Lead SOIC_N 162 °C/W A), and the total power dissipated in the package (P 14-Lead TSSOP 108 °C/W D) can be used to determine the junction temperature of the die. The junction temperature can be calculated as T
ESD CAUTION
J = TA + (PD × θJA) (1) The power dissipated in the package (PD) is the sum of the quiescent power dissipation and the power dissipated in the package due to the load drive for all outputs. It can be calculated by PD = (VT × IS) + (VS − VOUT) × (VOUT/RL) (2) where: VT is the total supply rail. IS is the quiescent current. VS is the positive supply rail. VOUT is the output of the amplifier. RL is the output load of the amplifier. Rev. F | Page 7 of 24 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION CONNECTION DIAGRAMS REVISION HISTORY SPECIFICATIONS 5 V OPERATION 3 V OPERATION ABSOLUTE MAXIMUM RATINGS MAXIMUM POWER DISSIPATION ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION USING THE ADA4891-1/ADA4891-2/ADA4891-3/ ADA4891-4 WIDEBAND, NONINVERTING GAIN OPERATION WIDEBAND, INVERTING GAIN OPERATION RECOMMENDED VALUES EFFECT OF RF ON 0.1 dB GAIN FLATNESS DRIVING CAPACITIVE LOADS TERMINATING UNUSED AMPLIFIERS DISABLE FEATURE (ADA4891-3 ONLY) SINGLE-SUPPLY OPERATION VIDEO RECONSTRUCTION FILTER MULTIPLEXER LAYOUT, GROUNDING, AND BYPASSING POWER SUPPLY BYPASSING GROUNDING INPUT AND OUTPUT CAPACITANCE INPUT-TO-OUTPUT COUPLING LEAKAGE CURRENTS OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS