Datasheet AD8571, AD8572, AD8574 (Analog Devices) - 4

ManufacturerAnalog Devices
DescriptionZero-Drift, Single-Supply, Rail-to-Rail Input/Output Operational Amplifiers
Pages / Page28 / 4 — AD8571/AD8572/AD8574. Data Sheet. SPECIFICATIONS 5 V ELECTRICAL …
RevisionF
File Format / SizePDF / 488 Kb
Document LanguageEnglish

AD8571/AD8572/AD8574. Data Sheet. SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max

AD8571/AD8572/AD8574 Data Sheet SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS Table 1 Parameter Symbol Conditions Min Typ Max

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AD8571/AD8572/AD8574 Data Sheet SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 5 μV −40°C ≤ TA ≤ +125°C 10 μV Input Bias Current IB 10 50 pA AD8571/AD8574 −40°C ≤ TA ≤ +125°C 1.0 1.5 nA AD8572 −40°C ≤ TA ≤ +85°C 160 300 pA −40°C ≤ TA ≤ +125°C 2.5 4 nA Input Offset Current IOS 20 70 pA AD8571/AD8574 −40°C ≤ TA ≤ +125°C 150 200 pA AD8572 −40°C ≤ TA ≤ +85°C 30 150 pA −40°C ≤ TA ≤ +125°C 150 400 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 120 140 dB −40°C ≤ TA ≤ +125°C 115 130 dB Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 125 145 dB −40°C ≤ TA ≤ +125°C 120 135 dB Offset Voltage Drift ∆VOS/∆T −40°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 4.99 4.998 V RL = 100 kΩ to GND @ −40°C to +125°C 4.99 4.997 V RL = 10 kΩ to GND 4.95 4.98 V RL = 10 kΩ to GND @ −40°C to +125°C 4.95 4.975 V Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV RL = 100 kΩ to V+ @ −40°C to +125°C 2 10 mV RL = 10 kΩ to V+ 10 30 mV RL = 10 kΩ to V+ @ −40°C to +125°C 15 30 mV Short-Circuit Limit ISC ±25 ±50 mA −40°C to +125°C ±40 mA Output Current IO ±30 mA −40°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB −40°C ≤ TA ≤ +125°C 115 130 dB Supply Current per Amplifier ISY VO = 0 V 850 975 μA −40°C ≤ TA ≤ +125°C 1000 1075 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.4 V/μs Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise en p-p 0 Hz to 10 Hz 1.3 μV p-p 0 Hz to 1 Hz 0.41 μV p-p Voltage Noise Density en f = 1 kHz 51 nV/√Hz Current Noise Density in f = 10 Hz 2 fA/√Hz 1 Gain testing is dependent upon test bandwidth. Rev. F | Page 4 of 28 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS 2.7 V ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL CHARACTERISTICS ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS FUNCTIONAL DESCRIPTION AMPLIFIER ARCHITECTURE BASIC AUTO-ZERO AMPLIFIER THEORY AUTO-ZERO PHASE AMPLIFICATION PHASE HIGH GAIN, CMRR, AND PSRR MAXIMIZING PERFORMANCE THROUGH PROPER LAYOUT 1/f NOISE CHARACTERISTICS RANDOM AUTO-ZERO CORRECTION ELIMINATES INTERMODULATION DISTORTION BROADBAND AND EXTERNAL RESISTOR NOISE CONSIDERATIONS OUTPUT OVERDRIVE RECOVERY INPUT OVERVOLTAGE PROTECTION OUTPUT PHASE REVERSAL CAPACITIVE LOAD DRIVE POWER-UP BEHAVIOR APPLICATIONS INFORMATION 5 V PRECISION STRAIN GAGE CIRCUIT 3 V INSTRUMENTATION AMPLIFIER HIGH ACCURACY THERMOCOUPLE AMPLIFIER PRECISION CURRENT METER PRECISION VOLTAGE COMPARATOR OUTLINE DIMENSIONS ORDERING GUIDE