Datasheet AD8541, AD8542, AD8544 (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | CMOS Rail-to-Rail General-Purpose Amplifiers |
| Pages / Page | 20 / 5 — AD8541/AD8542/AD8544. Table 3. Parameter. Symbol. Conditions. Min. Typ. … |
| Revision | G |
| File Format / Size | PDF / 317 Kb |
| Document Language | English |
AD8541/AD8542/AD8544. Table 3. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
AD8541/AD8542/AD8544
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 3. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 6 mV −40°C ≤ TA ≤ +125°C 7 mV Input Bias Current IB 4 60 pA −40°C ≤ TA ≤ +85°C 100 pA −40°C ≤ TA ≤ +125°C 1000 pA Input Offset Current IOS 0.1 30 pA −40°C ≤ TA ≤ +85°C 50 pA −40°C ≤ TA ≤ +125°C 500 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 40 48 dB −40°C ≤ TA ≤ +125°C 38 dB Large Signal Voltage Gain AVO RL = 100 kΩ, VO = 0.5 V to 2.2 V 20 40 V/mV −40°C ≤ TA ≤ +85°C 10 V/mV −40°C ≤ TA ≤ +125°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 4 μV/°C Bias Current Drift ΔIB/ΔT −40°C ≤ TA ≤ +85°C 100 fA/°C −40°C ≤ TA ≤ +125°C 2000 fA/°C Offset Current Drift ΔIOS/ΔT −40°C ≤ TA ≤ +125°C 25 fA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 4.9 4.965 V −40°C ≤ TA ≤ +125°C 4.875 V Output Voltage Low VOL IL = 1 mA 25 100 mV −40°C ≤ TA ≤ +125°C 125 mV Output Current IOUT VOUT = VS − 1 V 30 mA ISC ±60 mA Closed-Loop Output Impedance ZOUT f = 200 kHz, AV = 1 45 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB −40°C ≤ TA ≤ +125°C 60 dB Supply Current/Amplifier ISY VO = 0 V 45 65 μA −40°C ≤ TA ≤ +125°C 85 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 200 pF 0.45 0.92 V/μs Full Power Bandwidth BWP 1% distortion 70 kHz Settling Time tS To 0.1% (1 V step) 6 μs Gain Bandwidth Product GBP 1000 kHz Phase Margin ΦM 67 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 42 nV/√Hz en f = 10 kHz 38 nV/√Hz Current Noise Density in <0.1 pA/√Hz Rev. G | Page 5 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION NOTES ON THE AD854X AMPLIFIERS Lower Supply Current for 1 MHz Gain Bandwidth Higher Output Current Better Performance at Lower Voltages APPLICATIONS NOTCH FILTER COMPARATOR FUNCTION PHOTODIODE APPLICATION OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS
VS = 5.0 V, VCM = 2.5 V, TA = 25°C, unless otherwise noted.
Table 3. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 6 mV −40°C ≤ TA ≤ +125°C 7 mV Input Bias Current IB 4 60 pA −40°C ≤ TA ≤ +85°C 100 pA −40°C ≤ TA ≤ +125°C 1000 pA Input Offset Current IOS 0.1 30 pA −40°C ≤ TA ≤ +85°C 50 pA −40°C ≤ TA ≤ +125°C 500 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 40 48 dB −40°C ≤ TA ≤ +125°C 38 dB Large Signal Voltage Gain AVO RL = 100 kΩ, VO = 0.5 V to 2.2 V 20 40 V/mV −40°C ≤ TA ≤ +85°C 10 V/mV −40°C ≤ TA ≤ +125°C 2 V/mV Offset Voltage Drift ΔVOS/ΔT −40°C ≤ TA ≤ +125°C 4 μV/°C Bias Current Drift ΔIB/ΔT −40°C ≤ TA ≤ +85°C 100 fA/°C −40°C ≤ TA ≤ +125°C 2000 fA/°C Offset Current Drift ΔIOS/ΔT −40°C ≤ TA ≤ +125°C 25 fA/°C OUTPUT CHARACTERISTICS Output Voltage High VOH IL = 1 mA 4.9 4.965 V −40°C ≤ TA ≤ +125°C 4.875 V Output Voltage Low VOL IL = 1 mA 25 100 mV −40°C ≤ TA ≤ +125°C 125 mV Output Current IOUT VOUT = VS − 1 V 30 mA ISC ±60 mA Closed-Loop Output Impedance ZOUT f = 200 kHz, AV = 1 45 Ω POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.5 V to 6 V 65 76 dB −40°C ≤ TA ≤ +125°C 60 dB Supply Current/Amplifier ISY VO = 0 V 45 65 μA −40°C ≤ TA ≤ +125°C 85 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 100 kΩ, CL = 200 pF 0.45 0.92 V/μs Full Power Bandwidth BWP 1% distortion 70 kHz Settling Time tS To 0.1% (1 V step) 6 μs Gain Bandwidth Product GBP 1000 kHz Phase Margin ΦM 67 Degrees NOISE PERFORMANCE Voltage Noise Density en f = 1 kHz 42 nV/√Hz en f = 10 kHz 38 nV/√Hz Current Noise Density in <0.1 pA/√Hz Rev. G | Page 5 of 20 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION PIN CONFIGURATIONS TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION NOTES ON THE AD854X AMPLIFIERS Lower Supply Current for 1 MHz Gain Bandwidth Higher Output Current Better Performance at Lower Voltages APPLICATIONS NOTCH FILTER COMPARATOR FUNCTION PHOTODIODE APPLICATION OUTLINE DIMENSIONS ORDERING GUIDE AUTOMOTIVE PRODUCTS
