Datasheet AD8014 (Analog Devices) - 5
| Manufacturer | Analog Devices |
| Description | 400 MHz, Low Power, High Performance Amplifier |
| Pages / Page | 12 / 5 — AD8014. ABSOLUTE MAXIMUM RATINGS1. Table I. Maximum Power Dissipation vs. … |
| Revision | C |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
AD8014. ABSOLUTE MAXIMUM RATINGS1. Table I. Maximum Power Dissipation vs. Temperature. Ambient Temp. Power Watts. SOT-23-5. SOIC
Text Version of Document
AD8014 ABSOLUTE MAXIMUM RATINGS1
plastic. This is approximately +150°C. Even temporarily ex- Supply Voltage . .12.6 V ceeding this limit may cause a shift in parametric performance Internal Power Dissipation2 due to a change in the stresses exerted on the die by the pack- Small Outline Package (R) . 0.75 W age. Exceeding a junction temperature of +175°C may result in SOT-23-5 Package (RT) . 0.5 W device failure. Input Voltage Common Mode . ± VS The output stage of the AD8014 is designed for large load cur- Differential Input Voltage . ± 2.5 V rent capability. As a result, shorting the output to ground or to Output Short Circuit Duration power supply sources may result in a very large power dissipa- . Observe Power Derating Curves tion. To ensure proper operation it is necessary to observe the Storage Temperature Range . –65°C to +150°C maximum power derating tables. Operating Temperature Range . –40°C to +85°C Lead Temperature (Soldering 10 sec) . +300°C
Table I. Maximum Power Dissipation vs. Temperature
ESD (Human Body Model) . +1500 V NOTES
Ambient Temp Power Watts Power Watts
1 Stresses above those listed under Absolute Maximum Ratings may cause perma- ⴗ
C SOT-23-5 SOIC
nent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above listed in the operational section of this –40 0.79 1.19 specification is not implied. Exposure to Absolute Maximum Ratings for any –20 0.71 1.06 extended periods may affect device reliability. 0 0.63 0.94 2 Specification is for device in free air at 25°C. +20 0.54 0.81 8-Lead SOIC Package θJA = 155°C/W. 5-Lead SOT-23 Package θ +40 0.46 0.69 JA = 240°C/W. +60 0.38 0.56
MAXIMUM POWER DISSIPATION
+80 0.29 0.44 The maximum power that can be safely dissipated by the AD8014 +100 0.21 0.31 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
WARNING!
accumulate on the human body and test equipment and can discharge without detection. Although the AD8014 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality. –4– Rev. C
plastic. This is approximately +150°C. Even temporarily ex- Supply Voltage . .12.6 V ceeding this limit may cause a shift in parametric performance Internal Power Dissipation2 due to a change in the stresses exerted on the die by the pack- Small Outline Package (R) . 0.75 W age. Exceeding a junction temperature of +175°C may result in SOT-23-5 Package (RT) . 0.5 W device failure. Input Voltage Common Mode . ± VS The output stage of the AD8014 is designed for large load cur- Differential Input Voltage . ± 2.5 V rent capability. As a result, shorting the output to ground or to Output Short Circuit Duration power supply sources may result in a very large power dissipa- . Observe Power Derating Curves tion. To ensure proper operation it is necessary to observe the Storage Temperature Range . –65°C to +150°C maximum power derating tables. Operating Temperature Range . –40°C to +85°C Lead Temperature (Soldering 10 sec) . +300°C
Table I. Maximum Power Dissipation vs. Temperature
ESD (Human Body Model) . +1500 V NOTES
Ambient Temp Power Watts Power Watts
1 Stresses above those listed under Absolute Maximum Ratings may cause perma- ⴗ
C SOT-23-5 SOIC
nent damage to the device. This is a stress rating only, functional operation of the device at these or any other conditions above listed in the operational section of this –40 0.79 1.19 specification is not implied. Exposure to Absolute Maximum Ratings for any –20 0.71 1.06 extended periods may affect device reliability. 0 0.63 0.94 2 Specification is for device in free air at 25°C. +20 0.54 0.81 8-Lead SOIC Package θJA = 155°C/W. 5-Lead SOT-23 Package θ +40 0.46 0.69 JA = 240°C/W. +60 0.38 0.56
MAXIMUM POWER DISSIPATION
+80 0.29 0.44 The maximum power that can be safely dissipated by the AD8014 +100 0.21 0.31 is limited by the associated rise in junction temperature. The maximum safe junction temperature for plastic encapsulated devices is determined by the glass transition temperature of the
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
WARNING!
accumulate on the human body and test equipment and can discharge without detection. Although the AD8014 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
ESD SENSITIVE DEVICE
precautions are recommended to avoid performance degradation or loss of functionality. –4– Rev. C
