Datasheet 2N4401 (ON Semiconductor) - 4

ManufacturerON Semiconductor
DescriptionGeneral Purpose Transistors NPN Silicon
Pages / Page7 / 4 — 2N4401. Figure 7. Storage Time. Figure 8. Fall Time. SMALL−SIGNAL …
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File Format / SizePDF / 200 Kb
Document LanguageEnglish

2N4401. Figure 7. Storage Time. Figure 8. Fall Time. SMALL−SIGNAL CHARACTERISTICS. NOISE FIGURE. Figure 9. Frequency Effects

2N4401 Figure 7 Storage Time Figure 8 Fall Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE Figure 9 Frequency Effects

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2N4401
300 100 ts′ = ts - 1/8 tf 70 VCC = 30 V I 200 B1 = IB2 IB1 = IB2 IC/IB = 10 to 20 50 IC/IB = 20 30 100 TIME (ns) 20 I ALL C/IB = 10 F 70 , STORAGE TIME (ns)′ t f t s 50 10 7.0 5.0 30 10 20 30 50 70 100 200 300 500 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time Figure 8. Fall Time SMALL−SIGNAL CHARACTERISTICS NOISE FIGURE
VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz 10 10 IC = 1.0 mA, RS = 150 W f = 1.0 kHz IC = 500 mA, RS = 200 W 8.0 RS = OPTIMUM 8.0 IC = 100 mA, RS = 2.0 kW RS = SOURCE IC = 50 mA IC = 50 mA, RS = 4.0 kW RS = RESISTANCE IC = 100 mA 6.0 6.0 IC = 500 mA IC = 1.0 mA 4.0 4.0 , NOISE FIGURE (dB) , NOISE FIGURE (dB) NF NF 2.0 2.0 0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)
Figure 9. Frequency Effects Figure 10. Source Resistance Effects http://onsemi.com 4